Details

Autor(en) / Beteiligte

• Handel, P.H.
• Tournier, A.G.

Titel

Nanoscale Engineering for Reducing Phase Noise in Electronic Devices

Ist Teil von

• Proceedings of the IEEE, 2005, Vol.93 (10), p.1784-1814

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2005

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• An investigation of electronic 1/f noise in ultrasmall devices and systems is presented, focused on nanoscale engineering of electronic devices for low phase noise. The investigation is based on the quantum 1/f formulas. Nanotechnology raises new questions of electronic noise, since fluctuations are more important in smaller devices. Based on the quantum 1/f noise theory, we find that in a certain transition range of sizes this general law is suspended, but reappears for 1/f noise in the nanometer domain, where the transition from coherent to conventional quantum 1/f effect is complete. The coherent and conventional quantum 1/f effects and their connection are briefly derived. The resulting quantum 1/f formulas are used to derive the 1/f noise of GaN/AlGaN MODFETs, resonant tunneling diodes, bulk acoustic wave and surface acoustic wave quartz resonators, microelectromechanical systems resonators,and spin valves. They are also used to calculate phase noise in these devices and in oscillators based on them, from first principles along with some classical noise sources. Device optimization is thus facilitated for ultrasmall devices.