Details

Autor(en) / Beteiligte

• Mikulics, M.
• Marso, M.
• Wu, S.
• Fox, A.
• Lepsa, M.
• Grutzmacher, D.
• Sobolewski, R.
• Kordos, P.

Titel

Sensitivity Enhancement of Metal- Semiconductor -Metal Photodetectors on Low-Temperature-Grown GaAs Using Alloyed Contacts

Ist Teil von

• IEEE photonics technology letters, 2008-06, Vol.20 (12), p.1054-1056

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2008

Link zum Volltext

• IEEE_Xplore

Quelle

IEL

Beschreibungen/Notizen

• We have fabricated and characterized metal- semiconductor-metal (MSM) photodetectors based on low- temperature-grown GaAs with alloyed (i.e., ohmic-type) contacts. The annealed contacts optimize the electric field distribution inside the photodetector structure which results in an up-to-200% responsivity increase of the devices, compared to conventional MSM detectors with standard nonalloyed (Schottky-type) metallization fabricated on identical material. The improved MSM device with alloyed contacts shows more than three times larger output amplitude at illumination with a 100-fs Ti: sapphire laser, compared to the nonalloyed devices, without degradation of detector speed.