Details

Autor(en) / Beteiligte

• Ahn, S.-E.
• Lee, M.-J.
• Park, Y.
• Kang, B. S.
• Lee, C. B.
• Kim, K. H.
• Seo, S.
• Suh, D.-S.
• Kim, D.-C.
• Hur, J.
• Xianyu, W.
• Stefanovich, G.
• Yin, H.
• Yoo, I.-K.
• Lee, J.-H.
• Park, J.-B.
• Baek, I.-G.
• Park, B. H.

Titel

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

Ist Teil von

• Advanced materials (Weinheim), 2008-03, Vol.20 (5), p.924-928

Ort / Verlag

Weinheim: WILEY-VCH Verlag

Erscheinungsjahr

2008

Quelle

Wiley Online Library

Beschreibungen/Notizen

• A novel memory cell structure with a Pt/Ti‐doped NiO/Pt architecture is shown to exhibit the lowest write current reported thus far for a unipolar switching resistance‐change‐based device, as shown in the figure. The write current decreases dramatically upon scaling to cell sizes smaller than 100 nm×100 nm. High‐density universal memory can be fabricated by combining this node element with a selective switch.