Details

Autor(en) / Beteiligte

• Paterson, Alexandra F.
• Singh, Saumya
• Fallon, Kealan J.
• Hodsden, Thomas
• Han, Yang
• Schroeder, Bob C.
• Bronstein, Hugo
• Heeney, Martin
• McCulloch, Iain
• Anthopoulos, Thomas D.

Titel

Recent Progress in High‐Mobility Organic Transistors: A Reality Check

Ist Teil von

• Advanced materials (Weinheim), 2018-09, Vol.30 (36), p.e1801079-n/a

Ort / Verlag

Germany: Wiley Subscription Services, Inc

Erscheinungsjahr

2018

Quelle

Wiley-Blackwell Full Collection

Beschreibungen/Notizen

• Over the past three decades, significant research efforts have focused on improving the charge carrier mobility of organic thin‐film transistors (OTFTs). In recent years, a commonly observed nonlinearity in OTFT current–voltage characteristics, known as the “kink” or “double slope,” has led to widespread mobility overestimations, contaminating the relevant literature. Here, published data from the past 30 years is reviewed to uncover the extent of the field‐effect mobility hype and identify the progress that has actually been achieved in the field of OTFTs. Present carrier‐mobility‐related challenges are identified, finding that reliable hole and electron mobility values of 20 and 10 cm2 V−1 s−1, respectively, have yet to be achieved. Based on the analysis, the literature is then reviewed to summarize the concepts behind the success of high‐performance p‐type polymers, along with the latest understanding of the design criteria that will enable further mobility enhancement in n‐type polymers and small molecules, and the reasons why high carrier mobility values have been consistently produced from small molecule/polymer blend semiconductors. Overall, this review brings together important information that aids reliable OTFT data analysis, while providing guidelines for the development of next‐generation organic semiconductors. Overestimated carrier mobility values reported in recent years for organic thin‐film transistors (OTFTs) have contaminated the literature. 30 years of OTFT carrier mobility data is examined in an effort to identify actual progress achieved, and summarize the key design strategies behind high carrier mobility values for both p‐ and n‐type organic semiconductors.