Details

Autor(en) / Beteiligte

• Kundur Subramaniyan, Harish
• Klumperink, Eric A. M.
• Srinivasan, Venkatesh
• Kiaei, Ali
• Nauta, Bram

Titel

RF Transconductor Linearization Robust to Process, Voltage and Temperature Variations

Ist Teil von

• IEEE journal of solid-state circuits, 2015-11, Vol.50 (11), p.2591-2602

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2015

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• Software-defined radio receivers increasingly exploit linear RF V-I conversion, instead of RF voltage gain, to improve interference robustness. Unfortunately, the linearity of CMOS inverters, which are often used to implement V-I conversion, is highly sensitive to Process, Voltage and Temperature variations. This paper proposes a more robust technique based on resistive degeneration. To mitigate third-order IM3 distortion induced by the quadratic MOSFET I-V characteristic, a new linearization technique is proposed which exploits a floating battery by-pass circuit and replica biasing to improve IIP3 in a robust way. This paper explains the concept and analyzes linearity improvement. To demonstrate operation, an LNTA with current domain mixer is implemented in a 45 nm CMOS process. Compared to a conventional inverter based LNTA with the same transconductance, it improves IIP3 from 2 dBm to a robust P IIP3 of 8 dBm at the cost of 67% increase in power consumption.