Details

Autor(en) / Beteiligte

• Shelton, B.S.
• Lambert, D.J.H.
• Jian Jang Huang
• Wong, M.M.
• Chowdhury, U.
• Ting Gang Zhu
• Kwon, H.K.
• Liliental-Weber, Z.
• Benarama, M.
• Feng, M.
• Dupuis, R.D.

Titel

Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

Ist Teil von

• IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.490-494

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2001

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• The selective area growth (SAG) and properties of AlGaN/GaN heterojunction bipolar transistors (HBTs) grown by low-pressure metalorganic chemical vapor deposition (MOCVD) are described and analyzed. Transistors based on group III-nitride material are attractive for high-power and high-temperature applications. Much work has been focused on improving p-type material, as well as heterojunction interfaces. However, there have been very few reports on HBTs operating at room temperature, At this time, current gains for nitride-based HBTs have been limited to /spl sim/10. Selective area regrowth was applied to the growth of AlGaN/GaN HBTs to analyze its potential advantages as compared to more traditional growth techniques in order to realize improved electrical performance of the devices.