Details

Autor(en) / Beteiligte

• Khan, Abdul Naim
• Mishra, S. N.
• Routray, S.
• Chatterjee, Gaurav
• Jena, K.

Titel

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

Ist Teil von

• Journal of computational electronics, 2023-06, Vol.22 (3), p.827-838

Ort / Verlag

New York: Springer US

Erscheinungsjahr

2023

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We present an analytical model for Ferro PZT Al 2 O 3 /AlGaN/AlN/GaN MOSHEMT involving the solution of Poisson and Schrödinger equations. This analytical model covers most of the operating regimes of the Ferro PZT MOSHEMT. The two-dimensional electron gas (2-DEG) sheet charge density (n s ), threshold voltage (V th ), drain current (I ds ), gate capacitance (C gs and C gd ), and unit gain cutoff frequency(f T ) model equations are presented and simulated with MATLAB tool. It is observed that the insertion of the Ferro Pb(Zr, Ti)O 3 PZT (lead zirconium titanate) material can improve the device’s performance. The proposed Ferro PZT MOSHEMT model accurately predicts a higher drain current of 1.14 A/mm, a high transconductance of 362 S/mm, a gate-to-source capacitance of 50.99 pF, a gate-to-drain capacitance of 38.25 pF, and high cutoff frequency of 0.033 THz for 20 nm AlGaN barrier layer. The results show good agreement with the TCAD-Atlas simulation and are satisfactory for the different AlGaN barrier layer thicknesses. The generated model and simulation results show the potential of using the Ferro PZT MOSHEMT for high-power and RF/Microwave applications.