Details

Autor(en) / Beteiligte

• Lee, Jangseop
• Ban, Sanghyun
• Lee, Tae Hoon
• Hwang, Hyunsang

Titel

Defect Engineering of BTe Ovonic Threshold Switch (OTS) with Nitrogen Doping for Improved Electrical and Reliability Performance

Ist Teil von

• IEEE electron device letters, 2023-09, Vol.44 (9), p.1-1

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2023

Link zum Volltext

• Volltext

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• This study investigates the effect of N-doping on the nanoscale (d = 30 nm) BTe ovonic threshold switch (OTS) device to achieve ideal selector characteristics in terms of leakage current, cycling endurance, and variation. Based on our findings, N-doping significantly improves device performance. In particular, the N-doped BTe OTS exhibits an ultra-low leakage current (I off @ 1/2V th = 750 pA), low threshold voltage (V th ) variation (σ < 30 mV), excellent cycling endurance (> 10 11 ), and low V th drift (γ = 30 mV/dec.) characteristics. From density functional theory (DFT) calculation, we found that an increase in Te-Te lifetime after the N-doping process can improve the reliability characteristics of the OTS device. This study contributes importantly to the development of high-performance OTS devices, providing a fundamental understanding of the role of N-doping in enhancing device properties.