Details

Autor(en) / Beteiligte

• Cai, Haotian
• Tuokedaerhan, Kamale
• Lu, Zhenchuan
• Du, Hongguo
• Zhang, Renjia

Titel

Effect of Heat Treatment on Zirconium Oxide High‐k Gate Dielectric in Silicon‐Based Metal Oxide Semiconductor Capacitors

Ist Teil von

• Physica status solidi. A, Applications and materials science, 2023-05, Vol.220 (9), p.n/a

Ort / Verlag

Weinheim: Wiley Subscription Services, Inc

Erscheinungsjahr

2023

Link zum Volltext

Quelle

Wiley Online Library Journals Frontfile Complete

Beschreibungen/Notizen

• Herein, zirconia thin films are successfully prepared on silicon substrates using the sol–gel method, and the microstructure, optical, and electrical properties of zirconia high‐k gate dielectric films are analyzed at different annealing temperatures. X‐ray diffraction results show that ZrO2 films crystallize above 500 °C and the grain size increases with the increase of annealing temperature; X‐ray photoelectron spectroscopy analysis confirms that metal–oxygen bonds can be effectively formed and defects in the films are eliminated by annealing treatment, with significant changes in the valence band shift (ΔEv) and conduction band shift (ΔEc) with increasing annealing temperature. Analysis of the optical properties of the films by UV‐Vis confirms that all zirconia films have high transmittance, with the bandgap increasing from 5.54 to 5.74 eV with increasing annealing temperature. Atomic force microscope and field emission scanning electron microscope show that the film quality is better and the root mean square roughness of the zirconia films increases from 0.551 to 1.190 nm and the film thickness decreases from 176.19 to 58.73 nm with increasing annealing temperature. Electrical performance tests show that proper annealing is effective in improving electrical properties, such as obtaining a larger dielectric constant (k) and a lower leakage current density. Herein, uniform and dense ZrO2 films are prepared by a simple sol–gel method. The films exhibit excellent optical and electrical properties due to suitable precursors and annealing conditions. The ZrO2 films prepared in this work offer the possibility of selecting high‐k dielectric materials for metal oxide semiconductor field effect transistors devices.