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Energy-level engineering of the electron transporting layer for improving open-circuit voltage in dye and perovskite-based solar cells
Ist Teil von
Energy & environmental science, 2019-03, Vol.12 (3), p.958-964
Ort / Verlag
Cambridge: Royal Society of Chemistry
Erscheinungsjahr
2019
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Next-generation solar cells, such as dye-sensitized solar cells (DSSCs) and perovskite solar cells (PSCs), are fabricated in a configuration where light absorbers are located between the electron transporting layer (ETL) and the hole transporting layer (HTM). Although the most efficient DSSCs and PSCs have been fabricated using TiO
2
as the ETL, TiO
2
exhibits inherently low electron mobility with difficulty controlling the energy levels (
i.e.
, conduction and valence bands) as it possesses a single phase of two components. Here, we report the synthesis of Sr-substituted BaSnO
3
(BSSO) by a low-temperature solution process as a new alternative to TiO
2
for both PSCs and DSSCs. The energy-level tailoring by Sr incorporation into BaSnO
3
minimizes the open-circuit voltage (
V
OC
) loss at the interfaces of ETL/perovskite and ETL/electrolyte in the PSCs and DSSCs, thereby leading to an improved
V
OC
from 0.65 to 0.72 V in DSSC and 1.07 to 1.13 V in PSCs. Additionally, the BSSO ETL-based PSC shows improved photostability compared to the TiO
2
analog. Our results show that energy-level tuned BSSO can be applied as a universal ETL for improving efficiency in both PSCs and DSSCs.