Details

Autor(en) / Beteiligte

• Guo, Jianqiu
• Yang, Yu
• Raghothamachar, Balaji
• Kim, Jungyu
• Dudley, Michael
• Chung, Gilyong
• Sanchez, Edward
• Quast, Jeffrey
• Manning, Ian

Titel

Prismatic Slip in PVT-Grown 4H-SiC Crystals

Ist Teil von

• Journal of electronic materials, 2017-04, Vol.46 (4), p.2040-2044

Ort / Verlag

New York: Springer US

Erscheinungsjahr

2017

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Basal plane slip is the most frequently observed deformation mechanism in 4H-type silicon carbon (4H-SiC) single crystals grown by the physical vapor transport (PVT) method. However, it was recently reported that dislocations in such crystals can also glide in prismatic slip systems. In this study, we observed nonuniform distributions of three sets of prismatic dislocations in a commercial 4H-SiC substrate wafer. The nonuniformity is a result of the distribution of resolved shear stress on each prismatic slip system caused by radial thermal gradients in the growing crystal boule. A radial thermal model has been developed to estimate the thermal stress across the entire area of the crystal boule during PVT growth. The model results show excellent agreement with the observations, confirming that radial thermal gradients play a key role in activating prismatic slip in 4H-SiC during bulk growth.