Details

Autor(en) / Beteiligte

• Jahdi, Saeed
• Alatise, Olayiwola
• Li Ran
• Mawby, Philip

Titel

Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of dI /dt and Temperature

Ist Teil von

• IEEE transactions on power electronics, 2015-06, Vol.30 (6), p.3345-3355

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2015

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore

Beschreibungen/Notizen

• SiC Schottky Barrier diodes (SiC SBD) are known to oscillate/ring in the output terminal when used as free-wheeling diodes in voltage-source converters. This ringing is due to RLC resonance among the diode capacitance, parasitic resistance, and circuit stray inductance. In this paper, a model has been developed for calculating the switching energy of SiC diodes as a function of the switching rate (dI DS /dt of the commutating SiC MOSFET) and temperature. It is shown that the damping of the oscillations increases with decreasing temperature and decreasing dI DS /dt. This in turn determines the switching energy of the diode, which initially decreases with decreasing dI DS /dt and subsequently increases with decreasing dI DS /dt thereby indicating an optimal dI DS /dt for minimum switching energy. The total switching energy of the diode can be subdivided into three phases namely the current switching phase, the voltage switching phase, and the ringing phase. Although the switching energy in the current switching phase decreases with increasing switching rate, the switching energy of the voltage and ringing phase increases with the switching rate. The model developed characterizes the dependence of diode's switching energy on temperature and dI DS /dt, hence, can be used to predict the behavior of the SiC SBD.