Details

Autor(en) / Beteiligte

• Jungwoo Joh
• del Alamo, J A

Titel

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Ist Teil von

• IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.132-140

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

2011

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• Trapping is one of the most deleterious effects that limit performance and reliability in GaN HEMTs. In this paper, we present a methodology to study trapping characteristics in GaN HEMTs that is based on current-transient measurements. Its uniqueness is that it is amenable to integration with electrical stress experiments in long-term reliability studies. We present the details of the measurement and analysis procedures. With this method, we have investigated the trapping and detrapping dynamics of GaN HEMTs. In particular, we examined layer location, energy level, and trapping/detrapping time constants of dominant traps. We have identified several traps inside the AlGaN barrier layer or at the surface close to the gate edge and in the GaN buffer.