Details

Autor(en) / Beteiligte

• Gersbach, M.
• Maruyama, Y.
• Trimananda, R.
• Fishburn, M. W.
• Stoppa, D.
• Richardson, J. A.
• Walker, R.
• Henderson, R.
• Charbon, E.

Titel

A Time-Resolved, Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicron CMOS Technology

Ist Teil von

• IEEE journal of solid-state circuits, 2012-06, Vol.47 (6), p.1394-1407

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

2012

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore

Beschreibungen/Notizen

• We report on the design and characterization of a novel time-resolved image sensor fabricated in a 130 nm CMOS process. Each pixel within the 3232 pixel array contains a low-noise single-photon detector and a high-precision time-to-digital converter (TDC). The 10-bit TDC exhibits a timing resolution of 119 ps with a timing uniformity across the entire array of less than 2 LSBs. The differential non-linearity (DNL) and integral non-linearity (INL) were measured at ±0.4 and ±1.2 LSBs, respectively. The pixel array was fabricated with a pitch of 50 μm in both directions and with a total TDC area of less than 2000 μm 2 . The target application for this sensor is time-resolved imaging, in particular fluorescence lifetime imaging microscopy and 3D imaging. The characterization shows the suitability of the proposed sensor technology for these applications.