IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2895-2901
2009
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Details
- Autor(en) / Beteiligte
- Titel
- Measurement of Channel Temperature in GaN High-Electron Mobility Transistors
- Ist Teil von
- IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2895-2901
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2009
- Quelle
- IEEE Xplore
- Beschreibungen/Notizen
- In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is based on electrical measurements of performance-related figures of merit ( I Dmax and R ON ) with a synchronized pulsed I - V setup. As our technique involves only electrical measurement, no special design in device geometry is required, and packaged devices can be measured. We apply this technique to different device structures and validate its sensitivity and robustness.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9383eISSN: 1557-9646DOI: 10.1109/TED.2009.2032614Titel-ID: cdi_pascalfrancis_primary_22162431
- Format
- –
- Schlagworte
- Applied sciences, Channel temperature, Channels, Devices, Electrical measurement, Electrical resistance measurement, Electronics, Exact sciences and technology, Gallium nitride, Gallium nitrides, GaN, HEMTs, High electron mobility transistors, high-electron mobility transistors (HEMTs), junction temperature, Logic gates, measurement, Robustness, Semiconductor devices, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Temperature measurement, Thermal resistance, Transistors