Details

Autor(en) / Beteiligte

• Shengurov, V. G.
• Chalkov, V. Yu
• Denisov, S. A.
• Alyabina, N. A.
• Guseinov, D. V.
• Trushin, V. N.
• Gorshkov, A. P.
• Volkova, N. S.
• Ivanova, M. M.
• Kruglov, A. V.
• Filatov, D. O.

Titel

Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique

Ist Teil von

• Semiconductors (Woodbury, N.Y.), 2015-10, Vol.49 (10), p.1365-1368

Ort / Verlag

Moscow: Pleiades Publishing

Erscheinungsjahr

2015

Quelle

SpringerNature Journals

Beschreibungen/Notizen

• The fabrication of photodetectors for the wavelength range of communications λ = 1.3–1.55 µm on the basis of Ge/Si(001) heterostructures with thick (~0.5 µm) Ge layers grown by the hot-wire technique at reduced growth temperatures (350°C) is reported. The single-crystal Ga layers are distinguished by a low density of threading dislocations (~10 5 cm –2 ). The photodetectors exhibit a rather high quantum efficiency (~0.05 at λ = 1.5 µm and 300 K) at moderate reverse saturation current densities (~10 –2 A cm –2 ). Thus, it is shown that the hot-wire technique offers promise for the formation of integrated photodetectors for the wavelength range of communications, especially in the case of limitations on the conditions of heat treatments.