Details

Autor(en) / Beteiligte

• Ishikawa, F.
• Fuyuno, S.
• Higashi, K.
• Kondow, M.
• Machida, M.
• Oji, H.
• Son, J.-Y.
• Trampert, A.
• Umeno, K.
• Furukawa, Y.
• Wakahara, A.

Titel

Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy

Ist Teil von

• Applied physics letters, 2011-03, Vol.98 (12), p.121915-121915-3

Ort / Verlag

United States: American Institute of Physics

Erscheinungsjahr

2011

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• Using bulk sensitive hard x-ray photoelectron spectroscopy, we directly observe a spectrum related to N-As bonding defects in (Ga,In)(N,As)/Ga(N,As) heterostructure. The defects are most likely attributed to split interstitials. Their concentration is in the order of 10 19   cm − 3 , close to the detection limit of the measurement. Rapid thermal annealing eliminates the defects, leading to those undetectable. Similar phenomenon is observed for N-P bonding defects in In(N,P). The results indicate common features in dilute nitride semiconductor system: existence of N-(group V) bonding defects and their behavior on postgrowth annealing.