Details

Autor(en) / Beteiligte

• Gaddy, Benjamin E.
• Bryan, Zachary
• Bryan, Isaac
• Kirste, Ronny
• Xie, Jinqiao
• Dalmau, Rafael
• Moody, Baxter
• Kumagai, Yoshinao
• Nagashima, Toru
• Kubota, Yuki
• Kinoshita, Toru
• Koukitu, Akinori
• Sitar, Zlatko
• Collazo, Ramón
• Irving, Douglas L.

Titel

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Ist Teil von

• Applied physics letters, 2013-10, Vol.103 (16)

Ort / Verlag

United States

Erscheinungsjahr

2013

Quelle

American Institute of Physics

Beschreibungen/Notizen

• A prominent 2.8 eV emission peak is identified in bulk AlN substrates grown by physical vapor transport. This peak is shown to be related to the carbon concentration in the samples. Density functional theory calculations predict that this emission is caused by a donor-acceptor pair (DAP) recombination between substitutional carbon on the nitrogen site and a nitrogen vacancy. Photoluminescence and photoluminescence-excitation spectroscopy are used to confirm the model and indicate the DAP character of the emission. The interaction between defects provides a pathway to creating ultraviolet-transparent AlN substrates for optoelectronics applications.