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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Nature materials, 2011-08, Vol.10 (8), p.625-630

2011

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Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

Nano letters, 2009-04, Vol.9 (4), p.1476-1481

2009

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Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching

IEEE electron device letters, 2011-03, Vol.32 (3), p.399-401

2011

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Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

2012 Symposium on VLSI Technology (VLSIT), 2012, p.71-72

2012

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Bi-layered RRAM with unlimited endurance and extremely uniform switching

2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011, p.52-53

2011

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Volltext

Stackable All-Oxide-Based Nonvolatile Memory With Al2O3 Antifuse and p-CuOx/n-InZnOx Diode

IEEE electron device letters, 2009-05, Vol.30 (5), p.550-552

2009

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Double gate GaInZnO thin film transistors

Applied physics letters, 2008-08, Vol.93 (6), p.063505-063505-3

2008

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Modeling for bipolar resistive memory switching in transition-metal oxides

Physical review. B, Condensed matter and materials physics, 2010-10, Vol.82 (15), Article 155321

2010

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Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices

IEEE electron device letters, 2010-07, Vol.31 (7), p.725-727

2010

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Volltext

Multilevel Programmable Oxide Diode for Cross-Point Memory by Electrical-Pulse-Induced Resistance Change

IEEE electron device letters, 2009-10, Vol.30 (10), p.1036-1038

2009

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Volltext

Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching

IEEE transactions on nanotechnology, 2010-03, Vol.9 (2), p.131-133

2010

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All-solid-state spatial light modulator with independent phase and amplitude control for three-dimensional LiDAR applications

Nature nanotechnology, 2021-01, Vol.16 (1), p.69-76

2021

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Partial Androgen Insensitivity Syndrome Presenting with Gynecomastia

Endocrinology and Metabolism, 2015, 30(2), , pp.226-230

2015

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High-Current-Density CuO x/InZnOx Thin-Film Diodes for Cross-Point Memory Applications

Advanced materials (Weinheim), 2008-08, Vol.20 (16), p.3066-3069

2008

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Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

Advanced materials (Weinheim), 2007-11, Vol.19 (22), p.3919-3923

2007

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A case of acute suppurative thyroiditis with thyrotoxicosis in an elderly patient

Endocrinology and Metabolism, 2013, 28(1), , pp.50-54

2013

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Modeling for multilevel switching in oxide-based bipolar resistive memory

Nanotechnology, 2012-06, Vol.23 (22), p.225702-1-5

2012

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High-Current-Density CuOx/InZnOx Thin-Film Diodes for Cross-Point Memory Applications

Advanced materials (Weinheim), 2008-08, Vol.20 (16), p.3066-3069

2008

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Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

Advanced materials (Weinheim), 2008-03, Vol.20 (5), p.924-928

2008

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Hybrid mapping parameter estimation using hierarchical structure in object-oriented coding

IEEE transactions on consumer electronics, 1997-11, Vol.43 (4), p.1213-1219

1997

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A Robust Realtime Surveillance System

Lecture notes in computer science, 2006, Vol.4109, p.314-321

2006

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A Simple Device Unit Consisting of All NiO Storage and Switch Elements for Multilevel Terabit Nonvolatile Random Access Memory

ACS applied materials & interfaces, 2011-11, Vol.3 (11), p.4475-4479

2011

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Natural progress of a bone scan after cementless hydroxyapatite-coated total hip arthroplasty

Clinical orthopaedics and related research, 2001-08, Vol.389 (389), p.134-142

2001

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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta sub(2)O sub(5-x)/TaO sub( 2-x) bilayer structures

Nature materials, 2011-07, Vol.10 (8), p.625-630

2011

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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures

Nature materials, 2011-07, Vol.10 (8), p.625-630

2011

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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching

Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

Bi-layered RRAM with unlimited endurance and extremely uniform switching

Stackable All-Oxide-Based Nonvolatile Memory With Al2O3 Antifuse and p-CuOx/n-InZnOx Diode

Double gate GaInZnO thin film transistors

Modeling for bipolar resistive memory switching in transition-metal oxides

Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices

Multilevel Programmable Oxide Diode for Cross-Point Memory by Electrical-Pulse-Induced Resistance Change

Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching

All-solid-state spatial light modulator with independent phase and amplitude control for three-dimensional LiDAR applications

Partial Androgen Insensitivity Syndrome Presenting with Gynecomastia

High-Current-Density CuO x/InZnOx Thin-Film Diodes for Cross-Point Memory Applications

Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

A case of acute suppurative thyroiditis with thyrotoxicosis in an elderly patient

Modeling for multilevel switching in oxide-based bipolar resistive memory

High-Current-Density CuOx/InZnOx Thin-Film Diodes for Cross-Point Memory Applications

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

Hybrid mapping parameter estimation using hierarchical structure in object-oriented coding

A Robust Realtime Surveillance System

A Simple Device Unit Consisting of All NiO Storage and Switch Elements for Multilevel Terabit Nonvolatile Random Access Memory

Natural progress of a bone scan after cementless hydroxyapatite-coated total hip arthroplasty

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta sub(2)O sub(5-x)/TaO sub( 2-x) bilayer structures

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures

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