Details

Autor(en) / Beteiligte

• Liu, Meihua
• Huang, Zhangwei
• Chang, Kuan-Chang
• Lin, Xinnan
• Li, Lei
• Jin, Yufeng

Titel

Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technologyProject supported by Shenzhen Science and Technology Innovation Committee (Grant Nos. ZDSYS201802061805105, JCYJ20190808155007550, QJSCX20170728102129176, and JCYJ20170810163407761) and the National Natural Science Foundation of China (Grant No. U1613215)

Ist Teil von

• Chinese physics B, 2020-12, Vol.29 (12)

Ort / Verlag

Chinese Physical Society and IOP Publishing Ltd

Erscheinungsjahr

2020

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The impact of supercritical CO2/H2O technology on the threshold-voltage instability of AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors (MIS-HEMTs) is investigated. The MIS-HEMTs were placed in a supercritical fluid system chamber at 150 °C for 3 h. The chamber was injected with CO2 and H2O at pressure of 3000 psi (1 psi ≈ 6.895 kPa). Supercritical H2O fluid has the characteristics of liquid H2O and gaseous H2O at the same time, that is, high penetration and high solubility. In addition, OH− produced by ionization of H2O can fill the nitrogen vacancy near the Si3N4/GaN/AlGaN interface caused by high temperature process. After supercritical CO2/H2O treatment, the threshold voltage shift is reduced from 1 V to 0.3 V. The result shows that the threshold voltage shift of MIS-HEMTs could be suppressed by supercritical CO2/H2O treatment.