Details

Autor(en) / Beteiligte

• Zhou, R.
• Li, L.
• Zhao, W.
• Liao, Z.
• Nguyen, M. D.
• Nunnenkamp, M.
• Houwman, E. P.
• Koster, G.
• Rijnders, A. J. H. M.
• Gravesteijn, D. J.
• Hueting, R. J. E.

Titel

Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors

Ist Teil von

• 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.329-332

Ort / Verlag

IEEE

Erscheinungsjahr

2020

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• The impact of polarization effects induced by a ferroelectric layer on the on-state performance of ferroelectric gate AlGaN/GaN HEMTs has been studied by using experiments and extensive TCAD simulations. Stress-free and high quality crystalline (111) lead-zirconate-titanate (\mathrm{P}\mathrm{b}(\mathrm{Z}\mathrm{r}_{x}\mathrm{T}\mathrm{i}_{1-x})\mathrm{O}_{3} or PZT) films on top of GaN have been successfully obtained by adopting a single magnesium-oxide (MgO) monolayer as a buffer layer. By adjusting the zirconium composition (x) of PZT, solely the spontaneous polarization in PZT is varied. In addition a onedimensional electrostatic model has been derived showing the impact of the polarization in the ferroelectric gate on the 2DEG sheet density and threshold voltage (V_{\mathrm{T}\mathrm{H}}), which is in good agreement with TCAD simulations. The experimental data show for x=0.20 a minimum on-resistance (R_{\mathrm{O}\mathrm{N}}) of \sim 9.7\mathrm{k}\Omega and for x=0.52 a minimal V_{\mathrm{T}\mathrm{H}} of ~-3.3V. The results are important for providing a guide line to optimize ferroelectric gate AlGaN/GaN HEMTs.