Details

Autor(en) / Beteiligte

• Chahdi, Hassane Ouazzani
• Ougazzaden, Abdallah
• Salvestrini, Jean-Paul
• Maher, Hassan
• Soltani, Ali
• Helli, Omar
• Bourzgui, Nour-Eddine
• Breuil, Leo
• Danovitch, David
• Voss, Paul L.
• Sundaram, Suresh
• Aubry, Vincent
• Halfaya, Yacine

Titel

Sensors based on AlGaN/GaN HEMT for fast H2 and O2 detection and measurement at high temperature

Ist Teil von

• 2019 IEEE SENSORS, 2019, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2019

Link zum Volltext

• Volltext

Quelle

IEL

Beschreibungen/Notizen

• Gas sensors based on AlGaN/GaN transistors are fabricated using platinum gate to detect and to quantify 112 (1.5-10%) and O 2 (1.5-100%) species at high temperature (500 °C). The metrics ΔI/Δt measured within the 5 first seconds of the transient response to the target gas exposure is used to quantify the performance of the sensors. A linear relation between ΔI/Δt and gas concentration is found. ΔI/Δt increases with gas concentration and decreases at high temperature. Sensor sensitivity increases when gas concentration increases. For H 2 gas, it is noticed that the sensitivity increases when temperature increases. Sensors response and recovery times decrease as gas concentration increases and decrease when temperature decreases.