Details

Autor(en) / Beteiligte

• Hughes, B.T.
• Parmiter, P.J.
• Birbeck, J.C.
• Hydes, A.J.
• Lee, D.
• Uren, M.J.
• Martin, T.
• Wallis, R.H.

Titel

Fabrication and characterisation of Al/sub 0.23/Ga/sub 0.77/N/GaN HFETs on MOVPE layers

Ist Teil von

• 1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401), 1999, p.59-64

Ort / Verlag

IEEE

Erscheinungsjahr

1999

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• MOVPE has been used to grow 2D electron gas layers with concentration 8/spl times/10/sup 12/ cm/sup -2/ and mobility 10/sup 30/ cm/sup 2//Vsec in a AlGaN/GaN heterostructure. Mesa isolated HFET devices have been fabricated using this material which show excellent isolation and highly encouraging characteristics suitable for power microwave applications.