Details

Autor(en) / Beteiligte

• Sadik, Diane-Perle
• Jang-Kwon Lim
• Ranstad, Per
• Nee, Hans-Peter

Titel

Investigation of long-term parameter variations of SiC power MOSFETs

Ist Teil von

• 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015, p.1-10

Ort / Verlag

Jointly owned by EPE Association and IEEE PELS

Erscheinungsjahr

2015

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• Experimental investigations on the gate-oxide and body-diode reliability of commercially available Silicon Carbide (SiC) MOSFETs from the second generation are performed. The body-diode conduction test is performed with a current density of 50 A/cm 2 in order to determine if the body-diode of the MOSFETs is free from bipolar degradation. The second test is stressing the gate-oxide. A negative bias is applied on the gate oxide in order to detect and quantify potential drifts.