Details

Autor(en) / Beteiligte

• Hongxin Yang
• Minghua Li
• Wei He
• Yu Jiang
• Kian Guan Lim
• Wendong Song
• Zhuo, Victor Yi-Qian
• Chun Chia Tan
• Eng Keong Chua
• Weijie Wang
• Yi Yang
• Rong Ji

Titel

Novel selector for high density non-volatile memory with ultra-low holding voltage and 107 on/off ratio

Ist Teil von

• 2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T130-T131

Ort / Verlag

JSAP

Erscheinungsjahr

2015

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• We present a novel selector made of doped-chalcogenide material. This selector not only achieves low holding voltage (0.2 V) and large on/off ratio (>10 7 ), but also exhibits the high on-current density (>1.6 MA/cm 2 ) and large hysteresis window (1.2 V). Besides, excellent selector performances with ultra-low off-state leakage current (10 pA), high switching speed (<;10 ns), high endurance (>10 9 ), good thermal stability (up to 180°C) have been demonstrated. Furthermore, the device exhibits good scalability which is suitable for 3D array integrations.