Details

Autor(en) / Beteiligte

• Seung Ryul Lee
• Young-Bae Kim
• Man Chang
• Kyung Min Kim
• Chang Bum Lee
• Ji Hyun Hur
• Gyeong-Su Park
• Dongsoo Lee
• Myoung-Jae Lee
• Chang Jung Kim
• U-In Chung
• In-Kyeong Yoo
• Kinam Kim

Titel

Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

Ist Teil von

• 2012 Symposium on VLSI Technology (VLSIT), 2012, p.71-72

Ort / Verlag

IEEE

Erscheinungsjahr

2012

Link zum Volltext

• Volltext

Quelle

IEEE

Beschreibungen/Notizen

• A highly reliable RRAM with multi-level cell (MLC) characteristics were fabricated using a triple-layer structure (base layer/oxygen exchange layer/barrier layer) for the storage class memory applications. A reproducible multi-level switching behaviour was successfully observed, and simulated by the modulated Schottky barrier model. Morevoer, a new programming algorithm was developed for more reliable and uniform MLC operation. As a result, more than 10 7 cycles of switching endurance and 10 years of data retention at 85°C for all the 2 bit/cell operation were archieved.