Details

Autor(en) / Beteiligte

• Injun Hwang
• Hyoji Choi
• JaeWon Lee
• Hyuk Soon Choi
• Jongseob Kim
• Jongbong Ha
• Chang-Yong Um
• Sun-Kyu Hwang
• Jaejoon Oh
• Jun-Youn Kim
• Jai Kwang Shin
• Youngsoo Park
• U-in Chung
• In-Kyeong Yoo
• Kinam Kim

Titel

1.6kV, 2.9 mΩ cm2 normally-off p-GaN HEMT device

Ist Teil von

• 2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.41-44

Ort / Verlag

IEEE

Erscheinungsjahr

2012

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• A p-GaN/AlGaN/GaN based normally-off HEMT device has been demonstrated on a Si substrate. Our p-GaN based device shows not only a high threshold voltage of 3 V but also low gate leakage current. Buffer and device breakdown voltages exceed 1600 V with 5.2 um GaN buffer thickness and specific on-state resistance is 2.9mΩ cm 2 . The calculated figure of merit is 921 MV 2 /Ωcm 2 , which is the highest value reported for the GaN E-mode devices.