Details

Autor(en) / Beteiligte

• Kaniewska, M.
• Engstrom, O.
• Karmous, A.
• Petersson, G.
• Kasper, E.

Titel

Charge Carrier Traffic at Self-Assembled Ge Quantum Dots on Si

Ist Teil von

• 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 2012, p.1-2

Ort / Verlag

IEEE

Erscheinungsjahr

2012

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore

Beschreibungen/Notizen

• In this paper the voltage dependent occupation of states and their filling dynamics is investigated in two terminal device structures (Schottky barrier diode, p/n junction) by capacitance voltage (C-V) and deep level transient spectroscopy (DLTS) methods. Frequency scanned DLTS (FS-DLTS) was used, where the DLTS signal at a constant temperature is measured as a function of the repetition frequency of electrical pulses, f, with the emission voltage of the pulses, VR, as a parameter.