Details

Autor(en) / Beteiligte

• Faucher, M
• Cordier, Y
• Semond, F
• Brandli, V
• Grimbert, B
• Amar, A B
• Werquin, M
• Boyaval, C
• Gaquière, C
• Théron, D
• Buchaillot, L

Titel

Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

Ist Teil von

• 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems, 2011, p.581-584

Ort / Verlag

IEEE

Erscheinungsjahr

2011

Link zum Volltext

• IEEE_Xplore

Quelle

IEL

Beschreibungen/Notizen

• The properties of a new class of electromechanical resonators based on GaN are presented. By using the two-dimensional electron gas (2-DEG) present at the AlGaN/GaN interface and the piezoelectric properties of this heterostructure, we use the R-HEMT (Resonant High Electron Mobility Transistor) as an active piezoelectric transducer up to 5MHz. In addition to the amplification effect of piezoelectric detection, we show that the active piezoelectric transduction has a strong dependence with the channel mobility that is controlled by a top gate. This allows to envision highly tunable sensors with co-integrated HEMT electronics.