Details

Autor(en) / Beteiligte

• Markovic, Dejan
• Wang, Cheng C.
• Alarcon, Louis P.
• Liu, Tsung-Te
• Rabaey, Jan M.

Titel

Ultralow-Power Design in Near-Threshold Region

Ist Teil von

• Proceedings of the IEEE, 2010-02, Vol.98 (2), p.237-252

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2010

Link zum Volltext

• Volltext

Quelle

IEEE

Beschreibungen/Notizen

• Operation in the subthreshold region most often is synonymous to minimum-energy operation. Yet, the penalty in performance is huge. In this paper, we explore how design in the moderate inversion region helps to recover some of that lost performance, while staying quite close to the minimum-energy point. An energy-delay modeling framework that extends over the weak, moderate, and strong inversion regions is developed. The impact of activity and design parameters such as supply voltage and transistor sizing on the energy and performance in this operational region is derived. The quantitative benefits of operating in near-threshold region are established using some simple examples. The paper shows that a 20% increase in energy from the minimum-energy point gives back ten times in performance. Based on these observations, a pass-transistor based logic family that excels in this operational region is introduced. The logic family operates most of its logic in the above-threshold mode (using low-threshold transistors), yet containing leakage to only those in subthreshold. Operation below minimum-energy point of CMOS is demonstrated. In leakage-dominated ultralow-power designs, time-multiplexing will be shown to yield not only area, but also energy reduction due to lower leakage. Finally, the paper demonstrates the use of ultralow-power design techniques in chip synthesis.