Details

Autor(en) / Beteiligte

• Jungwoo Joh
• del Alamo, J.A.

Titel

Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

Ist Teil von

• 2006 International Electron Devices Meeting, 2006, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2006

Quelle

IEEE Xplore

Beschreibungen/Notizen

• We have carried out systematic experiments of the electrical reliability of state-of-the-art GaN HEMTs. We have found that degradation is mostly driven by electric field and that there is a critical electric field below which negligible degradation is observed. Device degradation is associated with the appearance of prominent trapping behavior. Degradation is consistent with a model of defect formation in the AlGaN barrier as a result of the high electric field. We postulate that lattice defects are introduced by excessive stress associated with the inverse piezoelectric effect. Electron trapping at these defects reduces the extrinsic sheet carrier concentration and the maximum drain current