Details

Autor(en) / Beteiligte

• Chao-Yang Lu
• Cooper, J.A.
• Tsuji, T.
• Gilyong Chung
• Williams, J.R.
• McDonald, K.
• Feldman, L.C.

Titel

Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

Ist Teil von

• IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1582-1588

Ort / Verlag

IEEE

Erscheinungsjahr

2003

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore (IEEE/IET Electronic Library - IEL)

Beschreibungen/Notizen

• We report the effect of processing variables on the inversion layer electron mobility of (0001)-oriented 4H-SiC n-channel MOSFETs. The process variables investigated include: i) implant anneal temperature and ambient; ii) oxidation procedure; iii) postoxidation annealing in nitric oxide (NO); iv) type of gate material, and v) high-temperature ohmic contact anneal. Electron mobility is significantly increased by a postoxidation anneal in NO, but other process variations investigated have only minor effects on the channel mobility. We also report the temperature dependence of electron mobility for NO and non-NO annealed n-channel MOSFETs.