Details

Autor(en) / Beteiligte

• Xie, Zonglun
• Wu, Xinke
• Dong, Zezheng
• Sun, Jiahui
• Sheng, Kuang
• Chen, Kevin J.

Titel

Dynamic On-Resistance Characterization of GaN Power HEMTs Under Forward/Reverse Conduction Using Multigroup Double Pulse Test

Ist Teil von

• IEEE transactions on power electronics, 2024-02, Vol.39 (2), p.1963-1967

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2024

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• In bridgeless power factor correction converters and inverters, GaN high-electron-mobility transistors (HEMTs) operate in both forward and reverse conduction modes, which may feature different dynamic on -resistance ( R ON ) behaviors. Despite the extensive study of dynamic R ON under forward conduction, dynamic R ON under reverse conduction still demands comprehensive evaluation. In this letter, the dynamic R ON of two commercial p-GaN gate HEMTs with different technologies under forward/reverse conduction and hard/soft switching is characterized using the custom-designed multigroup double pulse test system, which nearly eliminates the accumulated self-heating effect in the device. First, the test was conducted at off -state bias voltage = 400 V, I DS = 70% I DS(max) . For the Schottky-type p -GaN gate HEMTs, the dynamic R ON in reverse conduction is found to be more than 3%-5% higher compared to the forward conduction. However, for the hybrid-drain-embedded gate injection transistor, operating in reverse conduction mode leads to a slighter dynamic R ON degradation effect, with a reduction of approximately 10% compared to the forward conduction. Next, I DS was modulated to evaluate its impact on dynamic R ON . For both devices, during reverse conduction it was observed that the dynamic R ON initially decreases and subsequently increases with the I DS increase.