Details

Autor(en) / Beteiligte

• Giusi, G.
• Rapisarda, M.
• Scagliotti, M.
• Mariucci, L.
• Scandurra, G.
• Ciofi, C.

Titel

Low Frequency Noise in DNTT/Cytop™ based Organic Thin Film Transistors

Ist Teil von

• IEEE electron device letters, 2023-10, Vol.44 (10), p.1-1

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2023

Link zum Volltext

• Volltext

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• In this work we show the results of low frequency noise measurements (LFNMs) in staggered bottom gate top contact organic thin film transistors (OTFTs) made with dinaphtho-[2,3-b:2' ,3' -f]thieno[3,2-b]thiophene (DNTT) as semiconductor layer and CYTOP™ as dielectric layer. The measured 1/f noise follows a correlated number-mobility fluctuation mechanism with an extracted trap density < 10 10 cm -2 eV -1 , the lower value ever reported for OTFTs and comparable to c-Si devices. On the other hand, the extracted Coulomb scattering parameter is in the order of 10 7 Vs/C, in line with previous measurements on organic transistors. In particular we found similar results from device batches with technological differences and a much lower noise from reference devices with SiO 2 dielectric, suggesting that the low noise and extracted trap density can be mainly attributed to the quality of the DNTT/Cytop™ interface.