Details

Autor(en) / Beteiligte

• Tchoulfian, P.
• Donatini, F.
• Levy, F.
• Amstatt, B.
• Dussaigne, A.
• Ferret, P.
• Bustarret, E.
• Pernot, J.

Titel

Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires

Ist Teil von

• Applied physics letters, 2013-11, Vol.103 (20), p.202101

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2013

Link zum Volltext

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• Combined thermoelectric-resistivity measurements and micro-Raman experiments have been performed on single heavily Si-doped GaN wires. In both approaches, similar carrier concentration and mobility were determined taking into account the non-parabolicity of the conduction band. The unique high conductivity of Si-doped GaN wires is explained by a mobility μ = 56 cm2·V−1·s−1 at a carrier concentration n = 2.6 × 1020 cm−3. This is attributed to a more efficient dopant incorporation in Si-doped GaN microwires as compared to Si-doped GaN planar layers.