Details

Autor(en) / Beteiligte

• Sangaré, Paul
• Ducournau, Guillaume
• Grimbert, Bertrand
• Brandli, Virginie
• Faucher, Marc
• Gaquière, Christophe
• Íñiguez-de-la-Torre, Ana
• Íñiguez-de-la-Torre, Ignacio
• Millithaler, J. F.
• Mateos, Javier
• González, Tomas

Titel

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Ist Teil von

• Journal of applied physics, 2013-01, Vol.113 (3)

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2013

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called self switching diodes) have been fabricated for the first time in this material system using both recess-etching and ion implantation technologies. The responsivities of both types of devices have been measured and explained using Monte Carlo simulations and non linear analysis. Sensitivities up to 100 V/W are obtained at 0.3 THz with a 280 pW/Hz1/2 noise equivalent power.