Details

Autor(en) / Beteiligte

• Wilk, S. J.
• Lepkowski, W.
• Thornton, T. J.

Titel

32 dBm Power Amplifier on 45 nm SOI CMOS

Ist Teil von

• IEEE microwave and wireless components letters, 2013-03, Vol.23 (3), p.161-163

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

2013

Link zum Volltext

• Volltext

Quelle

IEEE Xplore

Beschreibungen/Notizen

• A silicon metal-semiconductor-field-effect-transistor (MESFET) power amplifier operating at 900 MHz fabricated on a 45 nm silicon-on-insulator CMOS process with no changes to the process flow is presented. The soft breakdown of the MESFET is 20 times that of the MOSFET and allowed a single transistor amplifier based on Class A bias conditions to operate at up to 32 dBm output power with an 8 V drain bias. The amplifier had a peak power added efficiency of 37.6%, gain of 11.1 dB, OIP3 of 39.3 dBm and 1 dB compression point at an output power of 31.6 dBm. The device required only 0.125 mm 2 of active area. Additionally, the depletion mode operation of the MESFET enables a simple input bias approach using an inductor to ground at the gate of the device.