Details

Autor(en) / Beteiligte

• Cha, Eunjung
• Wadefalk, Niklas
• Moschetti, Giuseppe
• Pourkabirian, Arsalan
• Stenarson, Jorgen
• Grahn, Jan

Titel

InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers

Ist Teil von

• IEEE electron device letters, 2020-07, Vol.41 (7), p.1005-1008

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2020

Quelle

IEEE Xplore

Beschreibungen/Notizen

• This paper reports on a 100-nm gate length InP high-electron-mobility transistor (HEMT) technology for cryogenic low-noise amplifiers (LNAs) with ultra-low power dissipation of <inline-formula> <tex-math notation="LaTeX">112~\mu \text{W} </tex-math></inline-formula>. This result was obtained by using 100-nm gate length InP HEMTs with improved transconductance at low drain current through a scaled-down gate-channel distance while maintaining a low gate leakage current with the use of an InP etch stop layer and Pt gate metal. The noise performance of InP HEMTs was demonstrated in a 4-8 GHz (C-band) three-stage hybrid LNA at the ambient temperature of 5 K. At a dc power dissipation of <inline-formula> <tex-math notation="LaTeX">300~\mu \text{W} </tex-math></inline-formula>, the average noise temperature was 2.8 K with 27 dB gain. At a dc power dissipation of <inline-formula> <tex-math notation="LaTeX">112~\mu \text{W} </tex-math></inline-formula>, the LNA exhibited an average noise temperature of 4.1 K with a gain of 20 dB. The presented results demonstrate the large potential of InP HEMT technology for sub-mW cryogenic LNA design.