IEEE electron device letters, 2017-10, Vol.38 (10), p.1437-1440
2017
Details
- Autor(en) / Beteiligte
- Titel
- Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation
- Ist Teil von
- IEEE electron device letters, 2017-10, Vol.38 (10), p.1437-1440
- Ort / Verlag
- United States: IEEE
- Erscheinungsjahr
- 2017
- Link zum Volltext
- Quelle
- IEEE Xplore
- Beschreibungen/Notizen
- The 1.2-kV-rated 4H-SiC Split Gate MOSFET (SG-MOSFET) structure is demonstrated to have a superior high-frequency figures-of-merit (HF-FOMs) by numerical simulations, with experimental validation for the first time. Excellent electrical characteristics (specific on-resistance, threshold voltage, breakdown voltage, reverse transfer capacitance,and gate-todrain charge) were measured from devices fabricated on a 6-in SiC wafer. Compared with the conventional MOSFET, the SG-MOSFET has 2.4× smaller HF-FOM [R on ×Q gd ] due to the reduced gate-to-drain charge.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0741-3106eISSN: 1558-0563DOI: 10.1109/LED.2017.2738616Titel-ID: cdi_crossref_primary_10_1109_LED_2017_2738616
- Format
- –
- Schlagworte
- 4H-SiC, Capacitance, Doping, Electric fields, Engineering, gate charge, high frequency FOM, JFETs, Logic gates, MOSFET, Numerical simulation, reverse transfer capacitance, Silicon carbide, split gate