Details

Autor(en) / Beteiligte

• Lin, Ming-Wei
• Liu, Lezhang
• Lan, Qing
• Tan, Xuebin
• Dhindsa, Kulwinder S
• Zeng, Peng
• Naik, Vaman M
• Cheng, Mark Ming-Cheng
• Zhou, Zhixian

Titel

Mobility enhancement and highly efficient gating of monolayer MoS 2 transistors with polymer electrolyte

Ist Teil von

• Journal of physics. D, Applied physics, 2012-08, Vol.45 (34), p.345102

Erscheinungsjahr

2012

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Abstract We report electrical characterization of monolayer molybdenum disulfide (MoS 2 ) devices using a thin layer of polymer electrolyte (PE) consisting of poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO 4 ) as both a contact-barrier reducer and channel mobility booster. We find that bare MoS 2 devices (without PE) fabricated on Si/SiO 2 have low channel mobility and large contact resistance, both of which severely limit the field-effect mobility of the devices. A thin layer of PEO/LiClO 4 deposited on top of the devices not only substantially reduces the contact resistance but also boost the channel mobility, leading up to three-orders-of-magnitude enhancement of the field-effect mobility of the device. When the PE is used as a gate medium, the MoS 2 field-effect transistors exhibit excellent device characteristics such as a near ideal subthreshold swing and an on/off ratio of 10 6 as a result of the strong gate-channel coupling.