Details

Autor(en) / Beteiligte

• Döscher, Henning
• Hannappel, Thomas
• Kunert, Bernardette
• Beyer, Andreas
• Volz, Kerstin
• Stolz, Wolfgang

Titel

In situ verification of single-domain III-V on Si(100) growth via metal-organic vapor phase epitaxy

Ist Teil von

• Applied physics letters, 2008-10, Vol.93 (17)

Erscheinungsjahr

2008

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Reflectance anisotropy spectroscopy (RAS) was used in situ for the quantification of antiphase domains on surfaces of thin GaP films deposited onto Si(100) by metal-organic vapor phase epitaxy (MOVPE). The preparation of a single-domain GaP∕Si(100) surface was determined via the analysis of RAS peak intensities in reference to the well-known P-rich surface reconstruction of homoepitaxially grown GaP(100). Both preprocessed Si(100) substrates and MOVPE as-grown GaP∕Si(100) films were also characterized ex situ by atomic force microscopy to identify the formation of mono- and diatomic surface steps and to analyze of the domain distribution, respectively.