Details

Autor(en) / Beteiligte

• Tixier, S.
• Adamcyk, M.
• Tiedje, T.
• Francoeur, S.
• Mascarenhas, A.
• Wei, Peng
• Schiettekatte, F.

Titel

Molecular beam epitaxy growth of GaAs1−xBix

Ist Teil von

• Applied physics letters, 2003-04, Vol.82 (14), p.2245-2247

Erscheinungsjahr

2003

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• GaAs 1−x Bi x epilayers with bismuth concentrations up to x=3.1% were grown on GaAs by molecular beam epitaxy. The Bi content in the films was measured by Rutherford backscattering spectroscopy. X-ray diffraction shows that GaAsBi is pseudomorphically strained to GaAs but that some structural disorder is present in the thick films. The extrapolation of the lattice constant of GaAsBi to the hypothetical zincblende GaBi alloy gives 6.33±0.06 Å. Room-temperature photoluminescence of the GaAsBi epilayers is obtained and a significant redshift in the emission of GaAsBi of ∼84 meV per percent Bi is observed.