Details

Autor(en) / Beteiligte

• Cheedarala, Ravi Kumar
• Duy, Le Chau
• Ahn, Kyoung Kwan

Titel

Double characteristic BNO-SPI-TENGs for robust contact electrification by vertical contact separation mode through ion and electron charge transfer

Ist Teil von

• Nano energy, 2018-02, Vol.44, p.430-437

Ort / Verlag

Elsevier Ltd

Erscheinungsjahr

2018

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• • Contact-electrification is a conventional triboelectrification technique for generating current through charge transfer when two different polarized materials are brought into contact. For the first time, in-built alternate hydrophilic and hydrophobic nano channels were developed where both ionic and electronic charge transfer mechanisms were realized through contact separation mode between BNO-SPI films and PTFE. In this paper, we examined the dynamic interaction between these materials and observed adequate output performance. The novel BNO-SPI-TENGs (i.e. SO3H.BNO-SPI-TENG, SO3Li.BNO-SPI-TENG, and SO3H.TEA.BNO-SPI-TENG) produced 75V and 1µA, 43V and 0.6µA, and 9V and 0.13µA of open-circuit voltages (Voc) and short-circuit currents (Jsc) at 6Hz, respectively. Particularly, the SO3H-BNO-SPI was dramatically boosted up the performance of TENG, up to 733% of Voc and 669% of Jsc, with respect to the SO3H.TEA-BNO-SPI because the mobility of H+ ions is very high on the device surface compared to the other two Li+ and TEA bulky ions. The developed dual characteristic BNO-SPI-TENGs are very good candidates for fulfilling the need for alternate contact separation mode TENGs. [Display omitted] •Novel double characteristic hydrophilic and hydrophobic nano channel oriented BNO-SPI films were proposed.•Contact electrification process was took place on the BNO-SPI films that followed ion and electron transfer mechanisms.•An electron-donor-acceptor complex mechanism was proposed for the electron transfer mechanism.•High triboelectric (Voc) and (Jsc) were observed from BNO-SPI-TENGs, in particular, 75V and 1µA for SO3H.BNO-SPI-TENG at 6Hz.