Details

Autor(en) / Beteiligte

• Brunkov, P.N.
• Il’inskaya, N.D.
• Karandashev, S.A.
• Karpukhina, N.G.
• Lavrov, A.A.
• Matveev, B.A.
• Remennyi, M.A.
• Stus’, N.M.
• Usikova, A.A.

Titel

Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes

Ist Teil von

• Infrared physics & technology, 2016-05, Vol.76, p.542-545

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2016

Link zum Volltext

Quelle

Elsevier ScienceDirect Journals Complete

Beschreibungen/Notizen

• •Lowest capacitance of InAs heterojunction PD.•Fast response.•High detectivity in the 3μm range.•BLIP operation at 150K at 3μm.•Flip-chip design. P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure photodiodes with linear impurity distribution in the space charge region have been fabricated and studied. The photodiodes showed good perspectives for use in low temperature pyrometry as low dark current (8·10−6A/cm2, Vbias=−0.5V, 164K) and background limited infrared photodetector (BLIP) regime starting from 150K (2π field of view, D3.1μm∗=1.4·1012cmHz1/2/W) have been demonstrated.