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Modification of a-Si under 100 eV Si atom bombardment
Ist Teil von
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-06, Vol.180 (1), p.299-305
Ort / Verlag
Elsevier B.V
Erscheinungsjahr
2001
Link zum Volltext
Quelle
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
Beschreibungen/Notizen
By molecular dynamics simulation, we study the response of an initially defect-free a-Si sample to 100 eV Si atom bombardment for fluences up to
2.6×10
15
cm
−2
, i.e., an equivalent of 4 ML coverage. Defects (over-coordinated atoms) are introduced into the sample at depths extending up to 30 Å, far beyond the average projectile range of 5.5 Å. This build-up of over-coordinated atoms is accompanied by a local increase of pressure of more than 1 GPa. For comparison, we also study atom bombardment of a strongly under-dense a-Si sample, prepared by simulated growth. This sample compactifies under irradiation, the initially high bulk concentration of under-coordinated atoms is reduced, and the initially tensile pressure in the sample relaxes.