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Atomistic simulation of stress effects in a-Si due to low-energy Si impact
Ist Teil von
Surface science, 2002-01, Vol.496 (3), p.196-208
Ort / Verlag
Lausanne: Elsevier B.V
Erscheinungsjahr
2002
Link zum Volltext
Quelle
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
Beschreibungen/Notizen
Using molecular-dynamics simulation, we study the response of an initially defect-free a-Si sample to Si atom bombardment with energies between 10 and 150 eV. In particular, we compare the results for a stress-free sample with those of a sample which has been initially subjected to compressive stress. For the compressed sample, we find a slightly decreased ion range and a considerably increased damage production. While in the stress-free sample, the stress is only little affected by the atom impact, the compressed sample shows distinct stress changes: for ion energies below 50 eV, it is further compressed, otherwise it is relaxed. We analyze this behavior by considering the recoil-implanted target atoms and the atoms energized in the collision cascade.