Details

Autor(en) / Beteiligte

• Schalch, Dirk
• Scharmann, Arthur
• Wolfrat, Robert

Titel

IR transmittance studies of hydrogen-free and hydrogenated silicon nitride and silicon oxynitride films deposited by reactive sputtering

Ist Teil von

• Thin solid films, 1987-12, Vol.155 (2), p.301-308

Ort / Verlag

Lausanne: Elsevier B.V

Erscheinungsjahr

1987

Link zum Volltext

Quelle

Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)

Beschreibungen/Notizen

• Amorphous silicon nitride and silicon oxynitride films were deposited by reactive r.f. sputtering in various reactive ambients of nitrogen, oxygen and hydrogen of different compositions. The IR transmittance of the films was studied as a function of their hydrogen content and the oxygen:nitrogen ratio. The results were discussed in terms of compensation of gap states by hydrogenation. The microscopic structure of the silicon oxynitride films is believed to depend on the oxygen:nitrogen atomic ratio.