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Reconfigurable transistors merge unipolar p‐ and n‐type characteristics of field‐effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine‐grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge‐trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated.
A proof of concept for an individually addressable Si nanowire reconfigurable nonvolatile transistor is presented for the first time. With integration of a charge trapping gate stack into a reconfigurable field‐effect transistor, successful programming and erasing for both p‐type and n‐type modes are performed, and four distinct states are demonstrated in a single device.