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Reverse blocking characteristics and mechanisms in Schottky-drain AIGaN/GaN HEMT with a drain field plate and floating field plates
Ist Teil von
中国物理B：英文版, 2016 (1), p.777-782
Erscheinungsjahr
2016
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
In this paper, a novel A1GaN/GaN HEMT with a Schottky drain and a compound field plate （SD-CFP HEMT） is presented for the purpose of better reverse blocking capability. The compound field plate （CFP） consists of a drain field plate （DFP） and several floating field plates （FFPs）. The physical mechanisms of the CFP to improve the reverse breakdown voltage and to modulate the distributions of channel electric field and potential are investigated by two-dimensional numer- ical simulations with Silvaco-ATLAS. Compared with the HEMT with a Schottky drain （SD HEMT） and the HEMT with a Schottky drain and a DFP （SD-FP HEMT）, the superiorities of SD-CFP HEMT lie in the continuous improvement of the reverse breakdown voltage by increasing the number of FFPs and in the same fabrication procedure as the SD-FP HEMT. Two useful optimization laws for the SD-CFP HEMTs are found and extracted from simulation results. The relationship between the number of the FFPs and the reverse breakdown voltage as well as the FP efficiency in SD-CFP HEMTs are discussed. The results in this paper demonstrate a great potential of CFP for enhancing the reverse blocking ability in A1GaN/GaN HEMT and may be of great value and significance in the design and actual manufacture of SD-CFP HEMTs.