Details

Autor(en) / Beteiligte

• 倪毅强 贺致远 姚尧 杨帆 周德秋 周桂林 沈震 钟健 郑越 张佰君 刘扬

Titel

Si and Mg pair-doped interlayers for improving performance of AIGaN/GaN heterostructure field effect transistors grown on Si substrate

Ist Teil von

• 中国物理B：英文版, 2015 (5), p.529-534

Erscheinungsjahr

2015

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We report a novel structure of A1GaN/GaN heterostructure field effect transistors （HFETs） with a Si and Mg pair- doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio （ - 10^9）. Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current.