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Si and Mg pair-doped interlayers for improving performance of AIGaN/GaN heterostructure field effect transistors grown on Si substrate
Ist Teil von
中国物理B:英文版, 2015 (5), p.529-534
Erscheinungsjahr
2015
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
We report a novel structure of A1GaN/GaN heterostructure field effect transistors (HFETs) with a Si and Mg pair- doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio ( - 10^9). Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current.